Silicon and oxygen synergistic effects for the discovery of new high-performance nonfullerene acceptors

Ying Qin, Hui Chen, Jia Yao, Yue Zhou, Yongjoon Cho, Yulin Zhu, Beibei Qiu, Cheng-Wei Ju, Zhi-Guo Zhang (), Feng He (), Changduk Yang, Yongfang Li and Dongbing Zhao ()
Additional contact information
Ying Qin: Nankai University
Hui Chen: Southern University of Science and Technology
Jia Yao: Beijing University of Chemical Technology
Yue Zhou: Nankai University
Yongjoon Cho: Ulsan National Institute of Science and Technology (UNIST)
Yulin Zhu: Southern University of Science and Technology
Beibei Qiu: Institute of Chemistry, Chinese Academy of Sciences
Cheng-Wei Ju: Nankai University
Zhi-Guo Zhang: Beijing University of Chemical Technology
Feng He: Southern University of Science and Technology
Changduk Yang: Ulsan National Institute of Science and Technology (UNIST)
Yongfang Li: Institute of Chemistry, Chinese Academy of Sciences
Dongbing Zhao: Nankai University

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract In organic electronics, an aromatic fused ring is a basic unit that provides π-electrons to construct semiconductors and governs the device performance. The main challenge in developing new π-skeletons for tuning the material properties is the limitation of the available chemical approach. Herein, we successfully synthesize two pentacyclic siloxy-bridged π-conjugated isomers to investigate the synergistic effects of Si and O atoms on the geometric and electronic influence of π-units in organic electronics. Notably, the synthesis routes for both isomers possess several advantages over the previous approaches for delivering conventional aromatic fused-rings, such as environmentally benign tin-free synthesis and few synthetic steps. To explore their potential application as photovoltaic materials, two isomeric acceptor–donor–acceptor type acceptors based on these two isomers were developed, showing a decent device efficiency of 10%, which indicates the great potential of this SiO-bridged ladder-type unit for the development of new high-performance semiconductor materials.

Date: 2020
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-020-19605-z Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-19605-z

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-020-19605-z

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().