Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

Fei Wang, Xuepeng Wang, Yi-Fan Zhao, Di Xiao, Ling-Jie Zhou, Wei Liu, Zhidong Zhang, Weiwei Zhao, Moses H. W. Chan, Nitin Samarth, Chaoxing Liu, Haijun Zhang () and Cui-Zu Chang ()
Additional contact information
Fei Wang: The Pennsylvania State University
Xuepeng Wang: Nanjing University
Yi-Fan Zhao: The Pennsylvania State University
Di Xiao: The Pennsylvania State University
Ling-Jie Zhou: The Pennsylvania State University
Wei Liu: Chinese Academy of Sciences
Zhidong Zhang: Chinese Academy of Sciences
Weiwei Zhao: Harbin Institute of Technology
Moses H. W. Chan: The Pennsylvania State University
Nitin Samarth: The Pennsylvania State University
Chaoxing Liu: The Pennsylvania State University
Haijun Zhang: Nanjing University
Cui-Zu Chang: The Pennsylvania State University

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

Date: 2021
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DOI: 10.1038/s41467-020-20349-z

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