Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis and Patrick E. Hopkins ()
Additional contact information
Kiumars Aryana: University of Virginia
John T. Gaskins: University of Virginia
Joyeeta Nag: Western Digital Corporation
Derek A. Stewart: Western Digital Corporation
Zhaoqiang Bai: Western Digital Corporation
Saikat Mukhopadhyay: NRC Research Associate at Naval Research Laboratory
John C. Read: Western Digital Corporation
David H. Olson: University of Virginia
Eric R. Hoglund: University of Virginia
James M. Howe: University of Virginia
Ashutosh Giri: University of Rhode Island
Michael K. Grobis: Western Digital Corporation
Patrick E. Hopkins: University of Virginia

Nature Communications, 2021, vol. 12, issue 1, 1-11

Abstract: Abstract Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs.

Date: 2021
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DOI: 10.1038/s41467-020-20661-8

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