Tunnel field-effect transistors for sensitive terahertz detection

I. Gayduchenko, S. G. Xu, G. Alymov, M. Moskotin, I. Tretyakov, T. Taniguchi, K. Watanabe, G. Goltsman, A. K. Geim, G. Fedorov (), D. Svintsov () and D. A. Bandurin ()
Additional contact information
I. Gayduchenko: Moscow Pedagogical State University
S. G. Xu: University of Manchester
G. Alymov: Moscow Institute of Physics and Technology (National Research University)
M. Moskotin: Moscow Pedagogical State University
I. Tretyakov: Lebedev Physical Institute of the Russian Academy of Sciences
T. Taniguchi: National Institute of Material Science
K. Watanabe: National Institute of Material Science
G. Goltsman: Moscow Pedagogical State University
A. K. Geim: University of Manchester
G. Fedorov: Moscow Pedagogical State University
D. Svintsov: Moscow Institute of Physics and Technology (National Research University)
D. A. Bandurin: Moscow Institute of Physics and Technology (National Research University)

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/ $$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

Date: 2021
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DOI: 10.1038/s41467-020-20721-z

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