2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Hitesh Agarwal, Bernat Terrés (), Lorenzo Orsini, Alberto Montanaro, Vito Sorianello, Marianna Pantouvaki, Kenji Watanabe, Takashi Taniguchi, Dries Van Thourhout, Marco Romagnoli and Frank H. L. Koppens ()
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Hitesh Agarwal: ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology
Bernat Terrés: ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology
Lorenzo Orsini: ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology
Alberto Montanaro: Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory
Vito Sorianello: Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory
Marianna Pantouvaki: Department of 3D and Silicon photonics systems, Imec
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Dries Van Thourhout: Ghent University-IMEC
Marco Romagnoli: Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory
Frank H. L. Koppens: ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology

Nature Communications, 2021, vol. 12, issue 1, 1-6

Abstract: Abstract Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

Date: 2021
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DOI: 10.1038/s41467-021-20926-w

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