Momentum-resolved visualization of electronic evolution in doping a Mott insulator

Cheng Hu, Jianfa Zhao, Qiang Gao, Hongtao Yan, Hongtao Rong, Jianwei Huang, Jing Liu, Yongqing Cai, Cong Li, Hao Chen, Lin Zhao, Guodong Liu, Changqing Jin (), Zuyan Xu, Tao Xiang and X. J. Zhou ()
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Cheng Hu: Institute of Physics, Chinese Academy of Sciences
Jianfa Zhao: Institute of Physics, Chinese Academy of Sciences
Qiang Gao: Institute of Physics, Chinese Academy of Sciences
Hongtao Yan: Institute of Physics, Chinese Academy of Sciences
Hongtao Rong: Institute of Physics, Chinese Academy of Sciences
Jianwei Huang: Institute of Physics, Chinese Academy of Sciences
Jing Liu: Institute of Physics, Chinese Academy of Sciences
Yongqing Cai: Institute of Physics, Chinese Academy of Sciences
Cong Li: Institute of Physics, Chinese Academy of Sciences
Hao Chen: Institute of Physics, Chinese Academy of Sciences
Lin Zhao: Institute of Physics, Chinese Academy of Sciences
Guodong Liu: Institute of Physics, Chinese Academy of Sciences
Changqing Jin: Institute of Physics, Chinese Academy of Sciences
Zuyan Xu: Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
Tao Xiang: Institute of Physics, Chinese Academy of Sciences
X. J. Zhou: Institute of Physics, Chinese Academy of Sciences

Nature Communications, 2021, vol. 12, issue 1, 1-10

Abstract: Abstract High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.

Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21605-6

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DOI: 10.1038/s41467-021-21605-6

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