High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion
Qi Zhang,
Yuhang Guo,
Wentao Ji,
Mengqi Wang,
Jun Yin,
Fei Kong,
Yiheng Lin,
Chunming Yin,
Fazhan Shi,
Ya Wang () and
Jiangfeng Du ()
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Qi Zhang: University of Science and Technology of China
Yuhang Guo: University of Science and Technology of China
Wentao Ji: University of Science and Technology of China
Mengqi Wang: University of Science and Technology of China
Jun Yin: University of Science and Technology of China
Fei Kong: University of Science and Technology of China
Yiheng Lin: University of Science and Technology of China
Chunming Yin: University of Science and Technology of China
Fazhan Shi: University of Science and Technology of China
Ya Wang: University of Science and Technology of China
Jiangfeng Du: University of Science and Technology of China
Nature Communications, 2021, vol. 12, issue 1, 1-6
Abstract:
Abstract High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21781-5
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DOI: 10.1038/s41467-021-21781-5
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