Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

Xiankun Zhang, Baishan Liu, Li Gao, Huihui Yu, Xiaozhi Liu, Junli Du, Jiankun Xiao, Yihe Liu, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang () and Yue Zhang ()
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Xiankun Zhang: University of Science and Technology Beijing
Baishan Liu: University of Science and Technology Beijing
Li Gao: University of Science and Technology Beijing
Huihui Yu: University of Science and Technology Beijing
Xiaozhi Liu: Collaborative Innovation Center of Quantum Matter
Junli Du: University of Science and Technology Beijing
Jiankun Xiao: University of Science and Technology Beijing
Yihe Liu: University of Science and Technology Beijing
Lin Gu: Collaborative Innovation Center of Quantum Matter
Qingliang Liao: University of Science and Technology Beijing
Zhuo Kang: University of Science and Technology Beijing
Zheng Zhang: University of Science and Technology Beijing
Yue Zhang: University of Science and Technology Beijing

Nature Communications, 2021, vol. 12, issue 1, 1-10

Abstract: Abstract The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T′-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T′-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-21861-6

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