Voltage controlled Néel vector rotation in zero magnetic field

Ather Mahmood, Will Echtenkamp, Mike Street, Jun-Lei Wang, Shi Cao, Takashi Komesu, Peter A. Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja and Christian Binek ()
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Ather Mahmood: University of Nebraska-Lincoln
Will Echtenkamp: University of Nebraska-Lincoln
Mike Street: University of Nebraska-Lincoln
Jun-Lei Wang: University of Nebraska-Lincoln
Shi Cao: University of Nebraska-Lincoln
Takashi Komesu: University of Nebraska-Lincoln
Peter A. Dowben: University of Nebraska-Lincoln
Pratyush Buragohain: University of Nebraska-Lincoln
Haidong Lu: University of Nebraska-Lincoln
Alexei Gruverman: University of Nebraska-Lincoln
Arun Parthasarathy: New York University
Shaloo Rakheja: University of Illinois at Urbana–Champaign
Christian Binek: University of Nebraska-Lincoln

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

Date: 2021
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DOI: 10.1038/s41467-021-21872-3

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