High-frequency rectifiers based on type-II Dirac fermions

Libo Zhang, Zhiqingzi Chen, Kaixuan Zhang, Lin Wang (), Huang Xu, Li Han, Wanlong Guo, Yao Yang, Chia-Nung Kuo, Chin Shan Lue, Debashis Mondal, Jun Fuji, Ivana Vobornik, Barun Ghosh, Amit Agarwal, Huaizhong Xing (), Xiaoshuang Chen (), Antonio Politano () and Wei Lu
Additional contact information
Libo Zhang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Zhiqingzi Chen: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Kaixuan Zhang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Lin Wang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Huang Xu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Li Han: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Wanlong Guo: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Yao Yang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Chia-Nung Kuo: National Cheng Kung University
Chin Shan Lue: National Cheng Kung University
Debashis Mondal: Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
Jun Fuji: Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
Ivana Vobornik: Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
Barun Ghosh: Indian Institute of Technology Kanpur
Amit Agarwal: Indian Institute of Technology Kanpur
Huaizhong Xing: Donghua University
Xiaoshuang Chen: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Antonio Politano: University of L’Aquila
Wei Lu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.

Date: 2021
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DOI: 10.1038/s41467-021-21906-w

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