Giant gauge factor of Van der Waals material based strain sensors
Wenjie Yan,
Huei-Ru Fuh,
Yanhui Lv,
Ke-Qiu Chen,
Tsung-Yin Tsai,
Yuh-Renn Wu,
Tung-Ho Shieh,
Kuan-Ming Hung (),
Juncheng Li,
Duan Zhang,
Cormac Ó Coileáin,
Sunil K. Arora,
Zhi Wang,
Zhaotan Jiang,
Ching-Ray Chang and
Han-Chun Wu ()
Additional contact information
Wenjie Yan: Beijing Institute of Technology
Huei-Ru Fuh: National Taiwan University
Yanhui Lv: Beijing Institute of Technology
Ke-Qiu Chen: Hunan University
Tsung-Yin Tsai: National Taiwan University
Yuh-Renn Wu: National Taiwan University
Tung-Ho Shieh: Kun-Shan University
Kuan-Ming Hung: National Kaohsiung University of Science and Technology
Juncheng Li: Beijing Institute of Technology
Duan Zhang: Capital Normal University
Cormac Ó Coileáin: Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin
Sunil K. Arora: Panjab University
Zhi Wang: Beijing Institute of Technology
Zhaotan Jiang: Beijing Institute of Technology
Ching-Ray Chang: National Taiwan University
Han-Chun Wu: Beijing Institute of Technology
Nature Communications, 2021, vol. 12, issue 1, 1-9
Abstract:
Abstract There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.
Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-22316-8
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DOI: 10.1038/s41467-021-22316-8
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