Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

Gwangmin Kim, Jae Hyun In, Young Seok Kim, Hakseung Rhee, Woojoon Park, Hanchan Song, Juseong Park and Kyung Min Kim ()
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Gwangmin Kim: Korea Advanced Institute of Science and Technology (KAIST)
Jae Hyun In: Korea Advanced Institute of Science and Technology (KAIST)
Young Seok Kim: Korea Advanced Institute of Science and Technology (KAIST)
Hakseung Rhee: Korea Advanced Institute of Science and Technology (KAIST)
Woojoon Park: Korea Advanced Institute of Science and Technology (KAIST)
Hanchan Song: Korea Advanced Institute of Science and Technology (KAIST)
Juseong Park: Korea Advanced Institute of Science and Technology (KAIST)
Kyung Min Kim: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbOx mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40 kb s−1, which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments.

Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-23184-y

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DOI: 10.1038/s41467-021-23184-y

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