Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Ruyi Chen, Qirui Cui, Liyang Liao, Yingmei Zhu, Ruiqi Zhang, Hua Bai, Yongjian Zhou, Guozhong Xing, Feng Pan, Hongxin Yang () and Cheng Song ()
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Ruyi Chen: Tsinghua University
Qirui Cui: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Liyang Liao: Tsinghua University
Yingmei Zhu: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Ruiqi Zhang: Tsinghua University
Hua Bai: Tsinghua University
Yongjian Zhou: Tsinghua University
Guozhong Xing: Institute of Microelectronics, Chinese Academy of Sciences
Feng Pan: Tsinghua University
Hongxin Yang: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Cheng Song: Tsinghua University

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

Date: 2021
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DOI: 10.1038/s41467-021-23414-3

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