Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Seongin Hong, Nicolò Zagni, Sooho Choo, Na Liu, Seungho Baek, Arindam Bala, Hocheon Yoo, Byung Ha Kang, Hyun Jae Kim, Hyung Joong Yun, Muhammad Ashraful Alam () and Sunkook Kim ()
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Seongin Hong: Sungkyunkwan University
Nicolò Zagni: University of Modena and Reggio Emilia
Sooho Choo: Sungkyunkwan University
Na Liu: Sungkyunkwan University
Seungho Baek: Sungkyunkwan University
Arindam Bala: Sungkyunkwan University
Hocheon Yoo: Gachon University
Byung Ha Kang: Yonsei University
Hyun Jae Kim: Yonsei University
Hyung Joong Yun: Korea Basic Science Institute (KBSI)
Muhammad Ashraful Alam: Purdue University
Sunkook Kim: Sungkyunkwan University

Nature Communications, 2021, vol. 12, issue 1, 1-11

Abstract: Abstract Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.

Date: 2021
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DOI: 10.1038/s41467-021-23711-x

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