The role of chalcogen vacancies for atomic defect emission in MoS2

Elmar Mitterreiter, Bruno Schuler, Ana Micevic, Daniel Hernangómez-Pérez, Katja Barthelmi, Katherine A. Cochrane, Jonas Kiemle, Florian Sigger, Julian Klein, Edward Wong, Edward S. Barnard, Kenji Watanabe, Takashi Taniguchi, Michael Lorke, Frank Jahnke, Johnathan J. Finley, Adam M. Schwartzberg, Diana Y. Qiu, Sivan Refaely-Abramson, Alexander W. Holleitner (), Alexander Weber-Bargioni () and Christoph Kastl ()
Additional contact information
Elmar Mitterreiter: Technical University of Munich
Bruno Schuler: Lawrence Berkeley National Laboratory
Ana Micevic: Technical University of Munich
Daniel Hernangómez-Pérez: Weizmann Institute of Science
Katja Barthelmi: Technical University of Munich
Katherine A. Cochrane: Lawrence Berkeley National Laboratory
Jonas Kiemle: Technical University of Munich
Florian Sigger: Technical University of Munich
Julian Klein: Technical University of Munich
Edward Wong: Lawrence Berkeley National Laboratory
Edward S. Barnard: Lawrence Berkeley National Laboratory
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Michael Lorke: University of Bremen
Frank Jahnke: University of Bremen
Johnathan J. Finley: Technical University of Munich
Adam M. Schwartzberg: Lawrence Berkeley National Laboratory
Diana Y. Qiu: Yale University
Sivan Refaely-Abramson: Weizmann Institute of Science
Alexander W. Holleitner: Technical University of Munich
Alexander Weber-Bargioni: Lawrence Berkeley National Laboratory
Christoph Kastl: Technical University of Munich

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

Date: 2021
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DOI: 10.1038/s41467-021-24102-y

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