Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Yan Chen, Xudong Wang, Le Huang, Xiaoting Wang, Wei Jiang, Zhen Wang, Peng Wang, Binmin Wu, Tie Lin, Hong Shen, Zhongming Wei (), Weida Hu (), Xiangjian Meng, Junhao Chu and Jianlu Wang ()
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Yan Chen: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Xudong Wang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Le Huang: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Xiaoting Wang: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Wei Jiang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Zhen Wang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Peng Wang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Binmin Wu: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Tie Lin: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Hong Shen: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Zhongming Wei: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Weida Hu: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Xiangjian Meng: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Junhao Chu: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Jianlu Wang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS2 VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS2 heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS2 realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 μs, and high detectivity of 4.7 × 1012 Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS2 van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices.

Date: 2021
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DOI: 10.1038/s41467-021-24296-1

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