An ultrasensitive molybdenum-based double-heterojunction phototransistor

Shun Feng, Chi Liu, Qianbing Zhu, Xin Su, Wangwang Qian, Yun Sun, Chengxu Wang, Bo Li, Maolin Chen, Long Chen, Wei Chen, Lili Zhang, Chao Zhen, Feijiu Wang, Wencai Ren, Lichang Yin (), Xiaomu Wang (), Hui-Ming Cheng () and Dong-Ming Sun ()
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Shun Feng: Chinese Academy of Sciences
Chi Liu: Chinese Academy of Sciences
Qianbing Zhu: Chinese Academy of Sciences
Xin Su: Nanjing University
Wangwang Qian: Chinese Academy of Sciences
Yun Sun: Chinese Academy of Sciences
Chengxu Wang: Chinese Academy of Sciences
Bo Li: Chinese Academy of Sciences
Maolin Chen: Chinese Academy of Sciences
Long Chen: Chinese Academy of Sciences
Wei Chen: Chinese Academy of Sciences
Lili Zhang: Chinese Academy of Sciences
Chao Zhen: Chinese Academy of Sciences
Feijiu Wang: Henan University
Wencai Ren: Chinese Academy of Sciences
Lichang Yin: Chinese Academy of Sciences
Xiaomu Wang: Nanjing University
Hui-Ming Cheng: Chinese Academy of Sciences
Dong-Ming Sun: Chinese Academy of Sciences

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and α-MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 1016 cm Hz1/2 W−1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.

Date: 2021
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DOI: 10.1038/s41467-021-24397-x

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