Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons

Yu-Hui Chen, Ronnie R. Tamming, Kai Chen, Zhepeng Zhang, Fengjiang Liu, Yanfeng Zhang, Justin M. Hodgkiss, Richard J. Blaikie, Boyang Ding () and Min Qiu ()
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Yu-Hui Chen: Beijing Institute of Technology
Ronnie R. Tamming: Dodd-Walls Centre for Photonic and Quantum Technologies
Kai Chen: Dodd-Walls Centre for Photonic and Quantum Technologies
Zhepeng Zhang: Peking University
Fengjiang Liu: Westlake University
Yanfeng Zhang: Peking University
Justin M. Hodgkiss: Dodd-Walls Centre for Photonic and Quantum Technologies
Richard J. Blaikie: Dodd-Walls Centre for Photonic and Quantum Technologies
Boyang Ding: Dodd-Walls Centre for Photonic and Quantum Technologies
Min Qiu: Westlake University

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS2) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS2 conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an effective measure to engineer optical responses of 2D semiconductors, allowing flexibilities in design and optimisation of photonic and optoelectronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-24667-8

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