Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates
Dong Kyu Lee,
Yunkyu Park,
Hyeji Sim,
Jinheon Park,
Younghak Kim,
Gi-Yeop Kim,
Chang-Beom Eom,
Si-Young Choi () and
Junwoo Son ()
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Dong Kyu Lee: Pohang University of Science and Technology (POSTECH)
Yunkyu Park: Pohang University of Science and Technology (POSTECH)
Hyeji Sim: Pohang University of Science and Technology (POSTECH)
Jinheon Park: Pohang University of Science and Technology (POSTECH)
Younghak Kim: Pohang Accelerator Laboratory
Gi-Yeop Kim: Pohang University of Science and Technology (POSTECH)
Chang-Beom Eom: University of Wisconsin-Madison
Si-Young Choi: Pohang University of Science and Technology (POSTECH)
Junwoo Son: Pohang University of Science and Technology (POSTECH)
Nature Communications, 2021, vol. 12, issue 1, 1-8
Abstract:
Abstract Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO2 buffer layers from TiO2/VO2/TiO2 by H2O2, millimeter-size TiO2 single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO2 epitaxial growth on the transferred TiO2 nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition ( $$\triangle \rho /\rho$$ △ ρ / ρ > 103) even in ultrathin (
Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-24740-2
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DOI: 10.1038/s41467-021-24740-2
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