Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices

Sebastian Heedt (), Marina Quintero-Pérez, Francesco Borsoi, Alexandra Fursina, Nick Loo, Grzegorz P. Mazur, Michał P. Nowak, Mark Ammerlaan, Kongyi Li, Svetlana Korneychuk, Jie Shen, May An Y. Poll, Ghada Badawy, Sasa Gazibegovic, Nick Jong, Pavel Aseev, Kevin Hoogdalem, Erik P. A. M. Bakkers and Leo P. Kouwenhoven
Additional contact information
Sebastian Heedt: Delft University of Technology
Marina Quintero-Pérez: Microsoft Quantum Lab Delft
Francesco Borsoi: Delft University of Technology
Alexandra Fursina: Microsoft Quantum Lab Delft
Nick Loo: Delft University of Technology
Grzegorz P. Mazur: Delft University of Technology
Michał P. Nowak: AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology
Mark Ammerlaan: Delft University of Technology
Kongyi Li: Delft University of Technology
Svetlana Korneychuk: Delft University of Technology
Jie Shen: Delft University of Technology
May An Y. Poll: Delft University of Technology
Ghada Badawy: Eindhoven University of Technology
Sasa Gazibegovic: Eindhoven University of Technology
Nick Jong: Delft University of Technology
Pavel Aseev: Microsoft Quantum Lab Delft
Kevin Hoogdalem: Microsoft Quantum Lab Delft
Erik P. A. M. Bakkers: Eindhoven University of Technology
Leo P. Kouwenhoven: Delft University of Technology

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract The realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.

Date: 2021
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DOI: 10.1038/s41467-021-25100-w

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