Flat epitaxial quasi-1D phosphorene chains

Wei Zhang, Hanna Enriquez, Yongfeng Tong, Andrew J. Mayne, Azzedine Bendounan, Alex Smogunov, Yannick J. Dappe, Abdelkader Kara, Gérald Dujardin and Hamid Oughaddou ()
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Wei Zhang: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay
Hanna Enriquez: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay
Yongfeng Tong: TEMPO Beamline, Synchrotron SOLEIL
Andrew J. Mayne: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay
Azzedine Bendounan: TEMPO Beamline, Synchrotron SOLEIL
Alex Smogunov: Université Paris-Saclay, CNRS, CEA, Service de Physique de l’Etat Condensé
Yannick J. Dappe: Université Paris-Saclay, CNRS, CEA, Service de Physique de l’Etat Condensé
Abdelkader Kara: University of Central Florida
Gérald Dujardin: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay
Hamid Oughaddou: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay

Nature Communications, 2021, vol. 12, issue 1, 1-7

Abstract: Abstract The emergence of peculiar phenomena in 1D phosphorene chains (P chains) has been proposed in theoretical studies, notably the Stark and Seebeck effects, room temperature magnetism, and topological phase transitions. Attempts so far to fabricate P chains, using the top-down approach starting from a few layers of bulk black phosphorus, have failed to produce reliably precise control of P chains. We show that molecular beam epitaxy gives a controllable bottom-up approach to grow atomically thin, crystalline 1D flat P chains on a Ag(111) substrate. Scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory calculations reveal that the armchair-shaped chains are semiconducting with an intrinsic 1.80 ± 0.20 eV band gap. This could make these P chains an ideal material for opto-electronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-25262-7

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