Evidence of two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn

Minyong Han, Hisashi Inoue, Shiang Fang, Caolan John, Linda Ye, Mun K. Chan, David Graf, Takehito Suzuki, Madhav Prasad Ghimire, Won Joon Cho, Efthimios Kaxiras and Joseph G. Checkelsky ()
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Minyong Han: Massachusetts Institute of Technology
Hisashi Inoue: Tohoku University
Shiang Fang: Rutgers University
Caolan John: Massachusetts Institute of Technology
Linda Ye: Massachusetts Institute of Technology
Mun K. Chan: National High Magnetic Field Laboratory, LANL
David Graf: National High Magnetic Field Laboratory
Takehito Suzuki: Massachusetts Institute of Technology
Madhav Prasad Ghimire: Tribhuvan University
Won Joon Cho: Samsung Advanced Institute of Technology (SAIT)
Efthimios Kaxiras: Harvard University
Joseph G. Checkelsky: Massachusetts Institute of Technology

Nature Communications, 2021, vol. 12, issue 1, 1-10

Abstract: Abstract The kagome lattice has long been regarded as a theoretical framework that connects lattice geometry to unusual singularities in electronic structure. Transition metal kagome compounds have been recently identified as a promising material platform to investigate the long-sought electronic flat band. Here we report the signature of a two-dimensional flat band at the surface of antiferromagnetic kagome metal FeSn by means of planar tunneling spectroscopy. Employing a Schottky heterointerface of FeSn and an n-type semiconductor Nb-doped SrTiO3, we observe an anomalous enhancement in tunneling conductance within a finite energy range of FeSn. Our first-principles calculations show this is consistent with a spin-polarized flat band localized at the ferromagnetic kagome layer at the Schottky interface. The spectroscopic capability to characterize the electronic structure of a kagome compound at a thin film heterointerface will provide a unique opportunity to probe flat band induced phenomena in an energy-resolved fashion with simultaneous electrical tuning of its properties. Furthermore, the exotic surface state discussed herein is expected to manifest as peculiar spin-orbit torque signals in heterostructure-based spintronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-25705-1

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