Surface lattice engineering for fine-tuned spatial configuration of nanocrystals

Bo Jiang, Yifei Yuan, Wei Wang, Kun He, Chao Zou, Wei Chen, Yun Yang (), Shun Wang (), Vitaliy Yurkiv () and Jun Lu ()
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Bo Jiang: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Yifei Yuan: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Wei Wang: University of Bergen
Kun He: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Chao Zou: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Wei Chen: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Yun Yang: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Shun Wang: Nanomaterials and Chemistry Key Laboratory, Wenzhou University
Vitaliy Yurkiv: University of Illinois at Chicago
Jun Lu: Chemical Sciences and Engineering Division, Argonne National Laboratory

Nature Communications, 2021, vol. 12, issue 1, 1-13

Abstract: Abstract Hybrid nanocrystals combining different properties together are important multifunctional materials that underpin further development in catalysis, energy storage, et al., and they are often constructed using heterogeneous seeded growth. Their spatial configuration (shape, composition, and dimension) is primarily determined by the heterogeneous deposition process which depends on the lattice mismatch between deposited material and seed. Precise control of nanocrystals spatial configuration is crucial to applications, but suffers from the limited tunability of lattice mismatch. Here, we demonstrate that surface lattice engineering can be used to break this bottleneck. Surface lattices of various Au nanocrystal seeds are fine-tuned using this strategy regardless of their shape, size, and crystalline structure, creating adjustable lattice mismatch for subsequent growth of other metals; hence, diverse hybrid nanocrystals with fine-tuned spatial configuration can be synthesized. This study may pave a general approach for rationally designing and constructing target nanocrystals including metal, semiconductor, and oxide.

Date: 2021
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DOI: 10.1038/s41467-021-25969-7

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