Strong intrinsic room-temperature ferromagnetism in freestanding non-van der Waals ultrathin 2D crystals

Hao Wu, Wenfeng Zhang, Li Yang, Jun Wang, Jie Li, Luying Li, Yihua Gao, Liang Zhang, Juan Du, Haibo Shu and Haixin Chang ()
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Hao Wu: Huazhong University of Science and Technology (HUST)
Wenfeng Zhang: Huazhong University of Science and Technology (HUST)
Li Yang: Huazhong University of Science and Technology (HUST)
Jun Wang: China Jiliang University
Jie Li: Huazhong University of Science and Technology (HUST)
Luying Li: Huazhong University of Science and Technology
Yihua Gao: Huazhong University of Science and Technology
Liang Zhang: Guangxi University of Science and Technology
Juan Du: Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences
Haibo Shu: China Jiliang University
Haixin Chang: Huazhong University of Science and Technology (HUST)

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Control of ferromagnetism is of critical importance for a variety of proposed spintronic and topological quantum technologies. Inducing long-range ferromagnetic order in ultrathin 2D crystals will provide more functional possibility to combine their unique electronic, optical and mechanical properties to develop new multifunctional coupled applications. Recently discovered intrinsic 2D ferromagnetic crystals such as Cr2Ge2Te6, CrI3 and Fe3GeTe2 are intrinsically ferromagnetic only below room temperature, mostly far below room temperature (Curie temperature, ~20–207 K). Here we develop a scalable method to prepare freestanding non-van der Waals ultrathin 2D crystals down to mono- and few unit cells (UC) and report unexpected strong, intrinsic, ambient-air-robust, room-temperature ferromagnetism with TC up to ~367 K in freestanding non-van der Waals 2D CrTe crystals. Freestanding 2D CrTe crystals show comparable or better ferromagnetic properties to widely-used Fe, Co, Ni and BaFe12O19, promising as new platforms for room-temperature intrinsically-ferromagnetic 2D crystals and integrated 2D devices.

Date: 2021
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DOI: 10.1038/s41467-021-26009-0

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