Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

Yue Li, Jun Fu, Xiaoyu Mao, Chen Chen, Heng Liu, Ming Gong () and Hualing Zeng ()
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Yue Li: University of Science and Technology of China
Jun Fu: University of Science and Technology of China
Xiaoyu Mao: University of Science and Technology of China
Chen Chen: University of Science and Technology of China
Heng Liu: University of Science and Technology of China
Ming Gong: University of Science and Technology of China
Hualing Zeng: University of Science and Technology of China

Nature Communications, 2021, vol. 12, issue 1, 1-7

Abstract: Abstract The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.

Date: 2021
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DOI: 10.1038/s41467-021-26200-3

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