A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

Yifei Yang, Mingkun Xu, Shujing Jia, Bolun Wang, Lujie Xu, Xinxin Wang, Huan Liu, Yuanshuang Liu, Yuzheng Guo, Lidan Wang, Shukai Duan, Kai Liu, Min Zhu, Jing Pei (), Wenrui Duan (), Dameng Liu () and Huanglong Li ()
Additional contact information
Yifei Yang: Tsinghua University
Mingkun Xu: Tsinghua University
Shujing Jia: Fudan University
Bolun Wang: Tsinghua University
Lujie Xu: Beijing Information Science & Technology University
Xinxin Wang: Tsinghua University
Huan Liu: Tsinghua University
Yuanshuang Liu: Tsinghua University
Yuzheng Guo: Swansea University
Lidan Wang: Southwest University
Shukai Duan: Southwest University
Kai Liu: Tsinghua University
Min Zhu: Chinese Academy of Sciences
Jing Pei: Tsinghua University
Wenrui Duan: Beijing Information Science & Technology University
Dameng Liu: Tsinghua University
Huanglong Li: Tsinghua University

Nature Communications, 2021, vol. 12, issue 1, 1-12

Abstract: Abstract The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.

Date: 2021
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Citations: View citations in EconPapers (2)

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DOI: 10.1038/s41467-021-26399-1

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