Magnetic memory driven by topological insulators

Hao Wu (), Aitian Chen, Peng Zhang, Haoran He, John Nance, Chenyang Guo, Julian Sasaki, Takanori Shirokura, Pham Nam Hai, Bin Fang, Seyed Armin Razavi, Kin Wong, Yan Wen, Yinchang Ma, Guoqiang Yu, Gregory P. Carman, Xiufeng Han, Xixiang Zhang and Kang L. Wang ()
Additional contact information
Hao Wu: University of California
Aitian Chen: King Abdullah University of Science and Technology
Peng Zhang: University of California
Haoran He: University of California
John Nance: University of California
Chenyang Guo: Chinese Academy of Sciences
Julian Sasaki: Tokyo Institute of Technology
Takanori Shirokura: Tokyo Institute of Technology
Pham Nam Hai: Tokyo Institute of Technology
Bin Fang: King Abdullah University of Science and Technology
Seyed Armin Razavi: University of California
Kin Wong: University of California
Yan Wen: King Abdullah University of Science and Technology
Yinchang Ma: King Abdullah University of Science and Technology
Guoqiang Yu: Chinese Academy of Sciences
Gregory P. Carman: University of California
Xiufeng Han: Chinese Academy of Sciences
Xixiang Zhang: King Abdullah University of Science and Technology
Kang L. Wang: University of California

Nature Communications, 2021, vol. 12, issue 1, 1-7

Abstract: Abstract Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θSH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

Date: 2021
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DOI: 10.1038/s41467-021-26478-3

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