Structural basis for high selectivity of a rice silicon channel Lsi1

Yasunori Saitoh, Namiki Mitani-Ueno, Keisuke Saito, Kengo Matsuki, Sheng Huang, Lingli Yang, Naoki Yamaji, Hiroshi Ishikita, Jian-Ren Shen, Jian Feng Ma () and Michihiro Suga ()
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Yasunori Saitoh: Research Institute for Interdisciplinary Science, Okayama University
Namiki Mitani-Ueno: Institute of Plant Science and Resources, Okayama University
Keisuke Saito: Research Center for Advanced Science and Technology, The University of Tokyo
Kengo Matsuki: Graduate School of Natural Science and Technology, Okayama University
Sheng Huang: Institute of Plant Science and Resources, Okayama University
Lingli Yang: Research Institute for Interdisciplinary Science, Okayama University
Naoki Yamaji: Institute of Plant Science and Resources, Okayama University
Hiroshi Ishikita: Research Center for Advanced Science and Technology, The University of Tokyo
Jian-Ren Shen: Research Institute for Interdisciplinary Science, Okayama University
Jian Feng Ma: Institute of Plant Science and Resources, Okayama University
Michihiro Suga: Research Institute for Interdisciplinary Science, Okayama University

Nature Communications, 2021, vol. 12, issue 1, 1-14

Abstract: Abstract Silicon (Si), the most abundant mineral element in the earth’s crust, is taken up by plant roots in the form of silicic acid through Low silicon rice 1 (Lsi1). Lsi1 belongs to the Nodulin 26-like intrinsic protein subfamily in aquaporin and shows high selectivity for silicic acid. To uncover the structural basis for this high selectivity, here we show the crystal structure of the rice Lsi1 at a resolution of 1.8 Å. The structure reveals transmembrane helical orientations different from other aquaporins, characterized by a unique, widely opened, and hydrophilic selectivity filter (SF) composed of five residues. Our structural, functional, and theoretical investigations provide a solid structural basis for the Si uptake mechanism in plants, which will contribute to secure and sustainable rice production by manipulating Lsi1 selectivity for different metalloids.

Date: 2021
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DOI: 10.1038/s41467-021-26535-x

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