Current-induced manipulation of exchange bias in IrMn/NiFe bilayer structures

Jaimin Kang, Jeongchun Ryu (), Jong-Guk Choi, Taekhyeon Lee, Jaehyeon Park, Soogil Lee, Hanhwi Jang, Yeon Sik Jung, Kab-Jin Kim and Byong-Guk Park ()
Additional contact information
Jaimin Kang: KAIST
Jeongchun Ryu: KAIST
Jong-Guk Choi: KAIST
Taekhyeon Lee: KAIST
Jaehyeon Park: KAIST
Soogil Lee: KAIST
Hanhwi Jang: KAIST
Yeon Sik Jung: KAIST
Kab-Jin Kim: KAIST
Byong-Guk Park: KAIST

Nature Communications, 2021, vol. 12, issue 1, 1-7

Abstract: Abstract The electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

Date: 2021
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DOI: 10.1038/s41467-021-26678-x

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