High-performance lasers for fully integrated silicon nitride photonics

Chao Xiang (), Joel Guo, Warren Jin, Lue Wu, Jonathan Peters, Weiqiang Xie, Lin Chang, Boqiang Shen, Heming Wang, Qi-Fan Yang, David Kinghorn, Mario Paniccia, Kerry J. Vahala, Paul A. Morton and John E. Bowers ()
Additional contact information
Chao Xiang: University of California, Santa Barbara
Joel Guo: University of California, Santa Barbara
Warren Jin: University of California, Santa Barbara
Lue Wu: California Institute of Technology
Jonathan Peters: University of California, Santa Barbara
Weiqiang Xie: University of California, Santa Barbara
Lin Chang: University of California, Santa Barbara
Boqiang Shen: California Institute of Technology
Heming Wang: California Institute of Technology
Qi-Fan Yang: California Institute of Technology
David Kinghorn: University of California, Santa Barbara
Mario Paniccia: Anello Photonics
Kerry J. Vahala: California Institute of Technology
Paul A. Morton: Morton Photonics
John E. Bowers: University of California, Santa Barbara

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

Date: 2021
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DOI: 10.1038/s41467-021-26804-9

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