High electron mobility in strained GaAs nanowires

Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin and Emmanouil Dimakis ()
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Leila Balaghi: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Si Shan: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Ivan Fotev: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Finn Moebus: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Rakesh Rana: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Tommaso Venanzi: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
René Hübner: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Thomas Mikolajick: Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden
Harald Schneider: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Manfred Helm: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Alexej Pashkin: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Emmanouil Dimakis: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf

Nature Communications, 2021, vol. 12, issue 1, 1-11

Abstract: Abstract Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

Date: 2021
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DOI: 10.1038/s41467-021-27006-z

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