High-specific-power flexible transition metal dichalcogenide solar cells

Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri, Aravindh Kumar, Frederick Nitta, Michelle E. Chen, Siavash Kananian, Raisul Islam, Kwan-Ho Kim, Jin-Hong Park, Ada S. Y. Poon, Mark L. Brongersma, Eric Pop and Krishna C. Saraswat ()
Additional contact information
Koosha Nassiri Nazif: Stanford University
Alwin Daus: Stanford University
Jiho Hong: Stanford University
Nayeun Lee: Stanford University
Sam Vaziri: Stanford University
Aravindh Kumar: Stanford University
Frederick Nitta: Stanford University
Michelle E. Chen: Stanford University
Siavash Kananian: Stanford University
Raisul Islam: Stanford University
Kwan-Ho Kim: Sungkyunkwan University
Jin-Hong Park: Sungkyunkwan University
Ada S. Y. Poon: Stanford University
Mark L. Brongersma: Stanford University
Eric Pop: Stanford University
Krishna C. Saraswat: Stanford University

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoOx capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g−1 for flexible TMD (WSe2) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g−1, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

Date: 2021
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DOI: 10.1038/s41467-021-27195-7

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