Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

R. Yukawa, M. Kobayashi, T. Kanda, D. Shiga, K. Yoshimatsu, S. Ishibashi, M. Minohara, M. Kitamura, K. Horiba, A. F. Santander-Syro and H. Kumigashira ()
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R. Yukawa: High Energy Accelerator Research Organization (KEK)
M. Kobayashi: High Energy Accelerator Research Organization (KEK)
T. Kanda: Tohoku University
D. Shiga: High Energy Accelerator Research Organization (KEK)
K. Yoshimatsu: Tohoku University
S. Ishibashi: National Institute of Advanced Industrial Science and Technology (AIST)
M. Minohara: High Energy Accelerator Research Organization (KEK)
M. Kitamura: High Energy Accelerator Research Organization (KEK)
K. Horiba: High Energy Accelerator Research Organization (KEK)
A. F. Santander-Syro: Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay
H. Kumigashira: High Energy Accelerator Research Organization (KEK)

Nature Communications, 2021, vol. 12, issue 1, 1-7

Abstract: Abstract The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Date: 2021
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DOI: 10.1038/s41467-021-27327-z

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