Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Su-Beom Song, Sangho Yoon, So Young Kim, Sera Yang, Seung-Young Seo, Soonyoung Cha, Hyeon-Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Lee, Jun Sung Kim, Moon-Ho Jo and Jonghwan Kim ()
Additional contact information
Su-Beom Song: Pohang University of Science and Technology
Sangho Yoon: Pohang University of Science and Technology
So Young Kim: Pohang University of Science and Technology
Sera Yang: Pohang University of Science and Technology
Seung-Young Seo: Pohang University of Science and Technology
Soonyoung Cha: Pohang University of Science and Technology
Hyeon-Woo Jeong: Pohang University of Science and Technology
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Gil-Ho Lee: Pohang University of Science and Technology
Jun Sung Kim: Institute for Basic Science (IBS)
Moon-Ho Jo: Pohang University of Science and Technology
Jonghwan Kim: Pohang University of Science and Technology

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-021-27524-w Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27524-w

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-021-27524-w

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().