Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation

Riccardo Ollearo, Junke Wang, Matthew J. Dyson, Christ H. L. Weijtens, Marco Fattori, Bas T. Gorkom, Albert J. J. M. Breemen, Stefan C. J. Meskers, René A. J. Janssen () and Gerwin H. Gelinck ()
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Riccardo Ollearo: Eindhoven University of Technology
Junke Wang: Eindhoven University of Technology
Matthew J. Dyson: Eindhoven University of Technology
Christ H. L. Weijtens: Eindhoven University of Technology
Marco Fattori: Eindhoven University of Technology
Bas T. Gorkom: Eindhoven University of Technology
Albert J. J. M. Breemen: TNO at Holst Centre
Stefan C. J. Meskers: Eindhoven University of Technology
René A. J. Janssen: Eindhoven University of Technology
Gerwin H. Gelinck: Eindhoven University of Technology

Nature Communications, 2021, vol. 12, issue 1, 1-9

Abstract: Abstract Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10−8 mA cm−2 and 2 × 10−14 A Hz−1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.

Date: 2021
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DOI: 10.1038/s41467-021-27565-1

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