Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions

Fei Xue (), Xin He, Yinchang Ma, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu and Xixiang Zhang ()
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Fei Xue: Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University
Xin He: Physical Science and Engineering Division, King Abdullah University of Science and Technology
Yinchang Ma: Physical Science and Engineering Division, King Abdullah University of Science and Technology
Dongxing Zheng: Physical Science and Engineering Division, King Abdullah University of Science and Technology
Chenhui Zhang: Physical Science and Engineering Division, King Abdullah University of Science and Technology
Lain-Jong Li: Physical Science and Engineering Division, King Abdullah University of Science and Technology
Jr-Hau He: Department of Materials Science and Engineering, City University of Hong Kong
Bin Yu: Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University
Xixiang Zhang: Physical Science and Engineering Division, King Abdullah University of Science and Technology

Nature Communications, 2021, vol. 12, issue 1, 1-8

Abstract: Abstract Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polarization control over Schottky barriers. However, for over a decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate the origin of ferroelectric resistance switching using planar van der Waals ferroelectric α-In2Se3 memristors. Through rational interfacial engineering, their initial Schottky barrier heights and polarization screening charges at both terminals can be delicately manipulated. This enables us to find that ferroelectric resistance switching is determined by three independent variables: ferroelectric polarization, Schottky barrier variation, and initial barrier height, as opposed to the generally reported explanation. Inspired by these findings, we demonstrate volatile and nonvolatile ferroelectric memristors with large on/off ratios above 104. Our work can be extended to other planar long-channel and vertical ultrashort-channel ferroelectric memristors to reveal their ferroelectric resistance switching regimes and improve their performances.

Date: 2021
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DOI: 10.1038/s41467-021-27617-6

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