Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon

Binbin Chen (), Nicolas Gauquelin, Nives Strkalj, Sizhao Huang, Ufuk Halisdemir, Minh Duc Nguyen, Daen Jannis, Martin F. Sarott, Felix Eltes, Stefan Abel, Matjaž Spreitzer, Manfred Fiebig, Morgan Trassin (), Jean Fompeyrine, Johan Verbeeck, Mark Huijben, Guus Rijnders and Gertjan Koster ()
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Binbin Chen: University of Twente
Nicolas Gauquelin: University of Antwerp
Nives Strkalj: ETH Zurich
Sizhao Huang: University of Twente
Ufuk Halisdemir: University of Twente
Minh Duc Nguyen: University of Twente
Daen Jannis: University of Antwerp
Martin F. Sarott: ETH Zurich
Felix Eltes: Lumiphase AG
Stefan Abel: Lumiphase AG
Matjaž Spreitzer: Jožef Stefan Institute
Manfred Fiebig: ETH Zurich
Morgan Trassin: ETH Zurich
Jean Fompeyrine: Lumiphase AG
Johan Verbeeck: University of Antwerp
Mark Huijben: University of Twente
Guus Rijnders: University of Twente
Gertjan Koster: University of Twente

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO3/BaTiO3/SrTiO3 superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO3 layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO3 single film and conventional BaTiO3/SrTiO3 superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO3 as the thickness of BaTiO3 increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.

Date: 2022
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DOI: 10.1038/s41467-021-27898-x

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