Defect-driven antiferromagnetic domain walls in CuMnAs films

Sonka Reimers (), Dominik Kriegner, Olena Gomonay, Dina Carbone, Filip Krizek, Vit Novák, Richard P. Campion, Francesco Maccherozzi, Alexander Björling, Oliver J. Amin, Luke X. Barton, Stuart F. Poole, Khalid A. Omari, Jan Michalička, Ondřej Man, Jairo Sinova, Tomáš Jungwirth, Peter Wadley, Sarnjeet S. Dhesi () and Kevin W. Edmonds ()
Additional contact information
Sonka Reimers: University of Nottingham
Dominik Kriegner: Technische Universität Dresden
Olena Gomonay: Johannes Gutenberg Universität Mainz
Dina Carbone: Lund University
Filip Krizek: Czech Academy of Sciences
Vit Novák: Czech Academy of Sciences
Richard P. Campion: University of Nottingham
Francesco Maccherozzi: Diamond Light Source
Alexander Björling: Lund University
Oliver J. Amin: University of Nottingham
Luke X. Barton: University of Nottingham
Stuart F. Poole: University of Nottingham
Khalid A. Omari: University of Nottingham
Jan Michalička: Brno University of Technology
Ondřej Man: Brno University of Technology
Jairo Sinova: Johannes Gutenberg Universität Mainz
Tomáš Jungwirth: University of Nottingham
Peter Wadley: University of Nottingham
Sarnjeet S. Dhesi: Diamond Light Source
Kevin W. Edmonds: University of Nottingham

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180∘ and 90∘ domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

Date: 2022
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DOI: 10.1038/s41467-022-28311-x

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