Tailoring the coercive field in ferroelectric metal-free perovskites by hydrogen bonding

Hwa Seob Choi, Shunning Li, In-Hyeok Park, Weng Heng Liew, Ziyu Zhu, Ki Chang Kwon, Lin Wang, In-Hwan Oh, Shisheng Zheng, Chenliang Su, Qing-Hua Xu, Kui Yao, Feng Pan () and Kian Ping Loh ()
Additional contact information
Hwa Seob Choi: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University
Shunning Li: School of Advanced Materials, Peking University Shenzhen Graduate School
In-Hyeok Park: Graduate School of Analytical Science and Technology (GRAST), Chungnam National University
Weng Heng Liew: Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)
Ziyu Zhu: National University of Singapore
Ki Chang Kwon: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University
Lin Wang: National University of Singapore
In-Hwan Oh: Neutron Science Division, Korea Atomic Energy Research Institute
Shisheng Zheng: School of Advanced Materials, Peking University Shenzhen Graduate School
Chenliang Su: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University
Qing-Hua Xu: National University of Singapore
Kui Yao: Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)
Feng Pan: School of Advanced Materials, Peking University Shenzhen Graduate School
Kian Ping Loh: SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract The miniaturization of ferroelectric devices in non-volatile memories requires the device to maintain stable switching behavior as the thickness scales down to nanometer scale, which requires the coercive field to be sufficiently large. Recently discovered metal-free perovskites exhibit advantages such as structural tunability and solution-processability, but they are disadvantaged by a lower coercive field compared to inorganic perovskites. Herein, we demonstrate that the coercive field (110 kV/cm) in metal-free ferroelectric perovskite MDABCO-NH4-(PF6)3 (MDABCO = N-methyl-N’-diazabicyclo[2.2.2]octonium) is one order larger than MDABCO-NH4-I3 (12 kV/cm) owing to the stronger intermolecular hydrogen bonding in the former. Using isotope experiments, the ferroelectric-to-paraelectric phase transition temperature and coercive field are verified to be strongly influenced by hydrogen bonds. Our work highlights that the coercive field of organic ferroelectrics can be tailored by tuning the strength of hydrogen bonding.

Date: 2022
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DOI: 10.1038/s41467-022-28314-8

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