Waveguide coupled III-V photodiodes monolithically integrated on Si

Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann and Kirsten E. Moselund ()
Additional contact information
Pengyan Wen: IBM Research Europe – Zurich
Preksha Tiwari: IBM Research Europe – Zurich
Svenja Mauthe: IBM Research Europe – Zurich
Heinz Schmid: IBM Research Europe – Zurich
Marilyne Sousa: IBM Research Europe – Zurich
Markus Scherrer: IBM Research Europe – Zurich
Michael Baumann: ETH Zürich, Institute of Electromagnetic Fields (IEF)
Bertold Ian Bitachon: ETH Zürich, Institute of Electromagnetic Fields (IEF)
Juerg Leuthold: ETH Zürich, Institute of Electromagnetic Fields (IEF)
Bernd Gotsmann: IBM Research Europe – Zurich
Kirsten E. Moselund: IBM Research Europe – Zurich

Nature Communications, 2022, vol. 13, issue 1, 1-11

Abstract: Abstract The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at −1 V and a responsivity up to 0.2 A/W at −2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.

Date: 2022
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DOI: 10.1038/s41467-022-28502-6

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