Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Elliot J. Connors, J. Nelson, Lisa F. Edge and John M. Nichol ()
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Elliot J. Connors: University of Rochester
J. Nelson: University of Rochester
Lisa F. Edge: HRL Laboratories LLC
John M. Nichol: University of Rochester

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.

Date: 2022
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DOI: 10.1038/s41467-022-28519-x

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