The role of lattice dynamics in ferroelectric switching

Qiwu Shi (), Eric Parsonnet, Xiaoxing Cheng, Natalya Fedorova, Ren-Ci Peng, Abel Fernandez, Alexander Qualls, Xiaoxi Huang, Xue Chang, Hongrui Zhang, David Pesquera, Sujit Das, Dmitri Nikonov, Ian Young, Long-Qing Chen, Lane W. Martin, Yen-Lin Huang (), Jorge Íñiguez and Ramamoorthy Ramesh ()
Additional contact information
Qiwu Shi: University of California
Eric Parsonnet: University of California
Xiaoxing Cheng: Penn State University, University Park
Natalya Fedorova: Materials Research and Technology Department, Luxembourg Institute of Science and Technology
Ren-Ci Peng: Xi’an Jiaotong University
Abel Fernandez: University of California
Alexander Qualls: University of California
Xiaoxi Huang: University of California
Xue Chang: Sichuan University
Hongrui Zhang: University of California
David Pesquera: University of California
Sujit Das: University of California
Dmitri Nikonov: Components Research, Intel Corporation
Ian Young: Components Research, Intel Corporation
Long-Qing Chen: Penn State University, University Park
Lane W. Martin: University of California
Yen-Lin Huang: University of California
Jorge Íñiguez: Materials Research and Technology Department, Luxembourg Institute of Science and Technology
Ramamoorthy Ramesh: University of California

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

Date: 2022
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DOI: 10.1038/s41467-022-28622-z

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