Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity

Tao Han (), Zejiang Wang, Ning Shen, Zewen Zhou, Xuehua Hou, Shufang Ding, Chunzhi Jiang, Xiaoyi Huang, Xiaofeng Zhang () and Linlin Liu
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Tao Han: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Zejiang Wang: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Ning Shen: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Zewen Zhou: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Xuehua Hou: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
Shufang Ding: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Chunzhi Jiang: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Xiaoyi Huang: Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University
Xiaofeng Zhang: National Engineering Laboratory for Modern Materials Surface Engineering Technology & The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangdong Institute of New Materials, Guangdong Academy of Sciences
Linlin Liu: Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Nature Communications, 2022, vol. 13, issue 1, 1-11

Abstract: Abstract The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (Vo) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. Vo decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (Iph/Idark) increases from 22 to 1.7 × 107.

Date: 2022
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DOI: 10.1038/s41467-022-28922-4

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