Dual-gated single-molecule field-effect transistors beyond Moore’s law

Linan Meng, Na Xin, Chen Hu, Hassan Al Sabea, Miao Zhang, Hongyu Jiang, Yiru Ji, Chuancheng Jia, Zhuang Yan, Qinghua Zhang, Lin Gu, Xiaoyan He, Pramila Selvanathan, Lucie Norel, Stéphane Rigaut (), Hong Guo (), Sheng Meng () and Xuefeng Guo ()
Additional contact information
Linan Meng: College of Chemistry and Molecular Engineering, Peking University
Na Xin: College of Chemistry and Molecular Engineering, Peking University
Chen Hu: McGill University
Hassan Al Sabea: ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
Miao Zhang: College of Electronic Information and Optical Engineering, Nankai University
Hongyu Jiang: Institute of Physics, Chinese Academy of Sciences
Yiru Ji: Institute of Physics, Chinese Academy of Sciences
Chuancheng Jia: College of Electronic Information and Optical Engineering, Nankai University
Zhuang Yan: College of Chemistry and Molecular Engineering, Peking University
Qinghua Zhang: Institute of Physics, Chinese Academy of Sciences
Lin Gu: Institute of Physics, Chinese Academy of Sciences
Xiaoyan He: ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
Pramila Selvanathan: ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
Lucie Norel: ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
Stéphane Rigaut: ISCR (Institut des Sciences Chimiques de Rennes)-UMR 6226
Hong Guo: McGill University
Sheng Meng: Institute of Physics, Chinese Academy of Sciences
Xuefeng Guo: College of Chemistry and Molecular Engineering, Peking University

Nature Communications, 2022, vol. 13, issue 1, 1-6

Abstract: Abstract As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore’s law.

Date: 2022
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DOI: 10.1038/s41467-022-28999-x

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