Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime

Xiaosong Chen, Zhongwu Wang, Jiannan Qi, Yongxu Hu, Yinan Huang, Shougang Sun, Yajing Sun, Wenbin Gong, Langli Luo, Lifeng Zhang, Haiyan Du, Xiaoxia Hu, Cheng Han, Jie Li, Deyang Ji, Liqiang Li () and Wenping Hu
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Xiaosong Chen: Tianjin University
Zhongwu Wang: Tianjin University
Jiannan Qi: Tianjin University
Yongxu Hu: Tianjin University
Yinan Huang: Tianjin University
Shougang Sun: Tianjin University
Yajing Sun: Tianjin University
Wenbin Gong: Xuzhou University of Technology
Langli Luo: Tianjin University
Lifeng Zhang: Tianjin University
Haiyan Du: Analysis and Testing Center of Tianjin University, Tianjin University
Xiaoxia Hu: Analysis and Testing Center of Tianjin University, Tianjin University
Cheng Han: Shenzhen University
Jie Li: Tianjin University
Deyang Ji: Tianjin University
Liqiang Li: Tianjin University
Wenping Hu: Tianjin University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The instability of organic field-effect transistors (OFETs) is one key obstacle to practical application and is closely related to the unstable aggregate state of organic semiconductors (OSCs). However, the underlying reason for this instability remains unclear, and no effective solution has been developed. Herein, we find that the intrinsic tensile and compressive strains that exist in OSC films are the key origins for aggregate state instability and device degradation. We further report a strain balance strategy to stabilize the aggregate state by regulating film thickness, which is based on the unique transition from tensile strain to compressive strain with increasing film thickness. Consequently, a strain-free and ultrastable OSC film is obtained by regulating the film thickness, with which an ultrastable OFET with a five-year lifetime is realized. This work provides a deeper understanding of and a solution to the instability of OFETs and sheds light on their industrialization.

Date: 2022
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DOI: 10.1038/s41467-022-29221-8

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