Non-invasive digital etching of van der Waals semiconductors

Jian Zhou, Chunchen Zhang, Li Shi, Xiaoqing Chen, Tae Soo Kim, Minseung Gyeon, Jian Chen, Jinlan Wang, Linwei Yu, Xinran Wang, Kibum Kang, Emanuele Orgiu, Paolo Samorì (), Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi, Peng Wang (), Yi Shi () and Songlin Li ()
Additional contact information
Jian Zhou: Nanjing University
Chunchen Zhang: Nanjing University
Li Shi: Southeast University
Xiaoqing Chen: Nanjing University
Tae Soo Kim: Korea Advanced Institute of Science and Technology
Minseung Gyeon: Korea Advanced Institute of Science and Technology
Jian Chen: Nanjing University
Jinlan Wang: Southeast University
Linwei Yu: Nanjing University
Xinran Wang: Nanjing University
Kibum Kang: Korea Advanced Institute of Science and Technology
Emanuele Orgiu: Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications
Paolo Samorì: University of Strasbourg, CNRS, ISIS UMR 7006
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Kazuhito Tsukagoshi: National Institute for Materials Science
Peng Wang: Nanjing University
Yi Shi: Nanjing University
Songlin Li: Nanjing University

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS2 reaches up to 1200 cm2 V−1s−1, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.

Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.nature.com/articles/s41467-022-29447-6 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-29447-6

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-022-29447-6

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().