Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai, Zefei Wu, Xu Han, Yong Chen, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng and Ning Wang ()
Additional contact information
Xiangbin Cai: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Zefei Wu: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Xu Han: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Yong Chen: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Shuigang Xu: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Jiangxiazi Lin: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Tianyi Han: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Pingge He: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Xuemeng Feng: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Liheng An: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Run Shi: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Jingwei Wang: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Zhehan Ying: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Yuan Cai: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Mengyuan Hua: Southern University of Science and Technology
Junwei Liu: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Ding Pan: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon
Chun Cheng: Southern University of Science and Technology
Ning Wang: The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the low contact resistance (down to 90 Ωµm in MoS2, towards the quantum limit), the high field-effect mobility (up to 358,000 cm2V−1s−1 in WSe2), and the prominent transport characteristics at cryogenic temperatures. This method also offers possibilities of the local manipulation of atomic structures and electronic properties for TMDSC device design.

Date: 2022
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DOI: 10.1038/s41467-022-29449-4

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