Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing

Rohit Abraham John (), Yiğit Demirağ, Yevhen Shynkarenko, Yuliia Berezovska, Natacha Ohannessian, Melika Payvand, Peng Zeng, Maryna I. Bodnarchuk, Frank Krumeich, Gökhan Kara, Ivan Shorubalko, Manu V. Nair, Graham A. Cooke, Thomas Lippert, Giacomo Indiveri () and Maksym V. Kovalenko ()
Additional contact information
Rohit Abraham John: Institute of Inorganic Chemistry, ETH Zürich
Yiğit Demirağ: University of Zurich and ETH Zurich
Yevhen Shynkarenko: Institute of Inorganic Chemistry, ETH Zürich
Yuliia Berezovska: Institute of Inorganic Chemistry, ETH Zürich
Natacha Ohannessian: Institute of Inorganic Chemistry, ETH Zürich
Melika Payvand: University of Zurich and ETH Zurich
Peng Zeng: ETH Zürich, The Scientific Center for Optical and Electron Microscopy (ScopeM)
Maryna I. Bodnarchuk: Institute of Inorganic Chemistry, ETH Zürich
Frank Krumeich: Institute of Inorganic Chemistry, ETH Zürich
Gökhan Kara: Empa-Swiss Federal Laboratories for Materials Science and Technology
Ivan Shorubalko: Empa-Swiss Federal Laboratories for Materials Science and Technology
Manu V. Nair: Synthara AG
Graham A. Cooke: Hiden Analytical Ltd
Thomas Lippert: Institute of Inorganic Chemistry, ETH Zürich
Giacomo Indiveri: University of Zurich and ETH Zurich
Maksym V. Kovalenko: Institute of Inorganic Chemistry, ETH Zürich

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. “Reconfigurable memristors” that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions. Judicious selection of the perovskite nanocrystals and organic capping ligands enable state-of-the-art endurance performances in both modes – volatile (2 × 106 cycles) and non-volatile (5.6 × 103 cycles). We demonstrate the relevance of such proof-of-concept perovskite devices on a benchmark reservoir network with volatile recurrent and non-volatile readout layers based on 19,900 measurements across 25 dynamically-configured devices.

Date: 2022
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DOI: 10.1038/s41467-022-29727-1

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