Twisted oxide lateral homostructures with conjunction tunability

Ping-Chun Wu, Chia-Chun Wei, Qilan Zhong, Sheng-Zhu Ho, Yi- De Liou, Yu-Chen Liu, Chun-Chien Chiu, Wen-Yen Tzeng, Kuo-En Chang, Yao-Wen Chang, Junding Zheng, Chun-Fu Chang, Chien-Ming Tu, Tse-Ming Chen, Chih-Wei Luo, Rong Huang, Chun-Gang Duan, Yi-Chun Chen, Chang-Yang Kuo and Jan-Chi Yang ()
Additional contact information
Ping-Chun Wu: National Cheng Kung University
Chia-Chun Wei: National Cheng Kung University
Qilan Zhong: East China Normal University
Sheng-Zhu Ho: National Cheng Kung University
Yi- De Liou: National Cheng Kung University
Yu-Chen Liu: National Cheng Kung University
Chun-Chien Chiu: National Cheng Kung University
Wen-Yen Tzeng: National Yang Ming Chiao Tung University
Kuo-En Chang: National Cheng Kung University
Yao-Wen Chang: National Cheng Kung University
Junding Zheng: East China Normal University
Chun-Fu Chang: Max-Planck Institute for Chemical Physics of Solids
Chien-Ming Tu: National Yang Ming Chiao Tung University
Tse-Ming Chen: National Cheng Kung University
Chih-Wei Luo: National Yang Ming Chiao Tung University
Rong Huang: East China Normal University
Chun-Gang Duan: East China Normal University
Yi-Chun Chen: National Cheng Kung University
Chang-Yang Kuo: National Yang Ming Chiao Tung University
Jan-Chi Yang: National Cheng Kung University

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.

Date: 2022
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DOI: 10.1038/s41467-022-30321-8

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