Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers

Junhyeon Jo, Jung Hwa Kim, Choong H. Kim, Jaebyeong Lee, Daeseong Choe, Inseon Oh, Seunghyun Lee, Zonghoon Lee (), Hosub Jin () and Jung-Woo Yoo ()
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Junhyeon Jo: Ulsan National Institute of Science and Technology
Jung Hwa Kim: Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS)
Choong H. Kim: Center for Correlated Electron Systems, Institute for Basic Science (IBS)
Jaebyeong Lee: Ulsan National Institute of Science and Technology
Daeseong Choe: Ulsan National Institute of Science and Technology
Inseon Oh: Ulsan National Institute of Science and Technology
Seunghyun Lee: Ulsan National Institute of Science and Technology
Zonghoon Lee: Ulsan National Institute of Science and Technology
Hosub Jin: Ulsan National Institute of Science and Technology
Jung-Woo Yoo: Ulsan National Institute of Science and Technology

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications.

Date: 2022
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DOI: 10.1038/s41467-022-30414-4

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